Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...
Spansion Inc. and United Microelectronics Corporation announced the joint development of a 40nm process that integrates UMC’s 40nm LP logic process with Spansion® proprietary embedded Charge Trap (eCT ...
A technical paper titled “Low-Power Charge Trap Flash Memory with MoS 2 Channel for High-Density In-Memory Computing” was published by researchers at Kyungpook National University, Sungkyunkwan ...
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